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  1. Nov 2025
    1. film thickness to 34 nm is beneficial torelieve pattern collapse, a few bridging patterns still exist at athinner film[34 nm, Fig.5(B)].

      30nm半间距下,34nm膜厚的光刻胶未发生图案坍塌,但有少量桥接

    2. 30 nm line/spacepattern[Fig.5(A, B)]. An obvious pattern collapse and bridgingwere observed in the case of 47 nm thickness[F

      30nm半间距下,47nm膜厚的光刻胶发生桥接和图案坍塌

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